PART |
Description |
Maker |
CM100TU-12F |
Trench Gate Design Six IGBTMOD?/a> 100 Amperes/600 Volts Trench Gate Design Six IGBTMOD⑩ 100 Amperes/600 Volts Trench Gate Design Six IGBTMOD 100 Amperes/600 Volts 240 x 128 pixel format, CFL Backlight with power harness
|
POWEREX[Powerex Power Semiconductors]
|
CM100TJ-24F |
128 x 64 pixel format, LED or EL Backlight available Trench Gate Design Six IGBTMOD 100 Amperes/1200 Volts Trench Gate Design Six IGBTMOD⑩ 100 Amperes/1200 Volts Trench Gate Design Six IGBTMOD?/a> 100 Amperes/1200 Volts
|
POWEREX[Powerex Power Semiconductors]
|
MTY100N10E ON2707 Y100N10E |
TMOS POWER FET 100 AMPERES 100 VOLTS RDS(on) = 0.011 OHM 100 A, 100 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA From old datasheet system
|
Motorola Mobility Holdings, Inc. MOTOROLA[Motorola, Inc]
|
CRSH1-4 CRSH1-10 CRSH1-6 CRSH1-8 CRSH1-2 CRSH1-5 |
SCHOTTKY BARRIER RECTIFIER 1.0 AMPS, 20 THRU 100 VOLTS 1 A, 100 V, SILICON, SIGNAL DIODE, DO-41
|
Central Semiconductor Corp. Central Semiconductor, Corp.
|
0105-100 |
TRANSISTOR | BJT | NPN | 16A I(C) | SOT-161VAR 100 Watts, 28 Volts, Class AB Defcom 100 - 500 MHz
|
GHz Technology
|
2M5991 2N5989 |
12 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 40,60,80 VOLTS 100 WATTS 12安培功率晶体管互补性的芯片40,60,8000 12 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 40/60/80 VOLTS 100 WATTS 12 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 40 /60 /80 VOLTS 100 WATTS 12 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 406080 VOLTS 100 WATTS
|
Motorola Mobility Holdings, Inc. Motorola Inc MOTOROLA[Motorola Inc] MOTOROLA[Motorola, Inc]
|
MJH6284 MJH6287 MJH6282 MJH6283 MJH6285 MJH6286 |
Supplementary protector; Current Rating:25A; No. of Poles:2; Mounting Type:DIN Rail RoHS Compliant: Yes DARLINGTON 20 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 / 80 / 100 VOLTS 160 WATTS DARLINGTON 20 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60, 80, 100 VOLTS 160 WATTS
|
Motorola, Inc. MOTOROLA[Motorola, Inc]
|
1N6844 |
100 VOLTS, 20 AMP SCHOTTKY RECTIFIER CERAMIC SURFACE MOUNT 20 A, 100 V, SILICON, RECTIFIER DIODE
|
Microsemi, Corp. Microsemi Corporation
|
SSR2010CTC |
20 AMP 100 VOLTS POSITIVE CENTERTAP SCHOTTKY RECTIFIER 20 A, 100 V, SILICON, RECTIFIER DIODE
|
Solid State Devices, Inc. SSDI[Solid States Devices, Inc]
|
CM100TJ-12F |
128 x 64 pixel format, LED or EL Backlight available 100 A, 600 V, N-CHANNEL IGBT Trench Gate Design 100 Amperes/600 Volts
|
Powerex, Inc. POWEREX[Powerex Power Semiconductors]
|
CM100DY-24H |
Dual IGBTMOD 100 Amperes/1200 Volts 100 A, 1200 V, N-CHANNEL IGBT
|
Powerex, Inc. POWEREX[Powerex Power Semiconductors]
|
MTW33N10E ON2695 |
TMOS POWER FET 33 AMPERES 100 VOLTS RDS(on) = 0.06 OHM 33 A, 100 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AE From old datasheet system
|
Motorola Mobility Holdings, Inc. MOTOROLA[Motorola, Inc]
|